| PART |
Description |
Maker |
| SGU20N40L |
Wide Noise Immunity IGBT Suitable for Strobe Flash applications(应用于闸门闪光的抗噪声绝缘栅双极晶体IGBT)) 400 V, N-CHANNEL IGBT, TO-251
|
Fairchild Semiconductor, Corp.
|
| FQU5N40TU |
400V N-Channel QFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 3.4 A, 400 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
Fairchild Semiconductor, Corp.
|
| STGP18N40LZ STGB18N40LZ-1 STGD18N40LZ-1 STGD18N40L |
25 A, 420 V, N-CHANNEL IGBT, TO-251
EAS 180 mJ - 390 V - internally clamped IGBT
|
ST Microelectronics
http://
STMicroelectronics
|
| SGU2N60UF |
Ultra-Fast IGBT 2.4 A, 600 V, N-CHANNEL IGBT, TO-251
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| NGB8202N NGB8202NT4 |
Ignition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAK
20 A, 400 V, N-Channel D2PAK
20 A, 400 V, N−Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| MGP20N40CL_D ON1864 MGP20N40CL |
SMARTDISCRETES Internally Clamped, N-Channel IGBT
From old datasheet system
20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT V ce(on) = 1.8 VOLTS 400 VOLTS (CLAMPED)
|
ONSEMI[ON Semiconductor]
|
| IXGN400N60A3 |
400 A, 600 V, N-CHANNEL IGBT MINIBLOC-4
|
IXYS, Corp.
|
| NGB8202AN NGB8202NT4G NGB8202N11 NGB8202ANT4G |
Ignition IGBT 20 A, 400 V, N.Channel D2PAK
|
ON Semiconductor
|
| STD5N20 3093 |
N - CHANNEL 200V - 0.7W - 5A - TO-251/TO-252 POWER MOS TRANSISTOR
N - CHANNEL 200V - 0.7ohm - 5A - TO-251/TO-252 POWER MOS TRANSISTOR
N - CHANNEL 200V - 0.7 - 5A - TO-251/TO-252 POWER MOS TRANSISTOR
From old datasheet system
|
SGS Thomson Microelectronics
STMicroelectronics
|
| ULB122 ULB122G-XX-TM3-T ULB122G-B6-TM3-T |
NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR
0.8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-251
|
UNISONIC TECHNOLOGIES CO LTD
|
| SW2N60 SWD2N60 |
N-channel MOSFET (TO-251 , TO-252)
|
Xian Semipower Electronic Technology Co., Ltd.
|
